2007. 5. 22 1/2 semiconductor technical data ktd1413 epitaxial planar npn transistor revision no : 1 high power switching applications. hammer driver, pulse motor driver applications. features high dc current gain : h fe =2000(min.) at v ce =2v, i c =3a. low saturation voltage : v ce(sat) =1.5v(max.) at i c =3a. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 100 v emitter-base voltage v eb0 7 v collector current i c 5 a base current i b 0.5 a collector power dissipation (tc=25 ) p c 25 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 - - 1 ma collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 100 - - v dc current gain h fe (1) v ce =2v, i c =3a 2000 6000 15000 h fe (2) v ce =2v, i c =5a 500 - - saturation voltage collector-emitter v ce(sat) i c =3a, i b =3ma - 0.9 1.5 v base-emitter v be(sat) i c =3a, i b =3ma - 1.6 2.0 switching time turn-on time t on 16.7 ? cc v =50v duty cycle 1% i b2 b2 i =-i =3ma b1 b2 i i b1 20 s b1 i input output - 1.0 - s storage time t stg - 3.5 - fall time t f - 1.2 - 3k ? base collecto r emitter 300 ? ~ = ~ = equivalent circuit
2007. 5. 22 2/2 ktd1413 revision no : 1 c 0 collector current i (a) ce 4 3 25 1 collector-emitter voltage v (v) 0 ce i - v c 10 dc current gain h fe 100 0.01 collector current i (a) 0.03 1 0.1 0.3 c fe h - i c 50 0.3 saturation voltage v (v) ce(sat) 100 0.01 collector current i (a) 0.03 1 0.1 0.3 0.5 c ce(sat) v - i c collector current i (a) c 3.0 5.0 1 collector-emitter voltage v (v) 350 510 30 ce safe operating area 1 2 3 4 5 tc=25 c common emitter 1.0ma 0.7ma 0.5ma 0.4ma 0.35ma b i =0.3ma 30 50 300 500 1000 3000 5000 10000 3510 common emitter v =2v ce 200 150 100 50 ambient temperature ta ( c) 0 c collector power dissipation p (w) 10 30 10 5 3 1 0.5 0.1 3510 0.1 0.5 1 3 5 10 30 0.01 100 0.3 50 10 5 3 c 0.5 0.3 0.1 1 0.03 collector current i (a) c i /i =1000 common emitter b b common emitter i /i =1000 c 1.0 0.5 0.3 0.1 0.05 0.03 0.01 10 100 300 1000 *pw=100 s *3 00 s *1ms *3ms *100ms *10ms v max. ceo i max. c (pulsed) * single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature p - ta c 20 30 40 tc=ta infinite heat sink c v - i be(sat) collector-emitter base-emitter be(sat) saturation voltage v (v)
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